Tipless Probes:   

It’s easier to glue particles on flat, tipless cantilevers.  These probes are ideal for working with particles, where colloidal interactions are sensed between a flat surface and a particle glued on the cantilever.

DNP-O-Tipless – Standard SiN Cantilevers but without tip.

  • Wafer:  9861-180-#1
  • Box of 20, $200

High Stiffness Si probes 

The tapping Silicon Probes in this unique, research wafer have a wide range of force constants, about 30 to 230 N/m, measured by the “thermal method”.  Nearby probes probably have similar force constants, but we don’t have a map showing variation across the wafer. The target specification for this wafer was k = 150 N/m, cantilever dimensions:  length 125 um, width 35 um, thickness 6 um, however this is not guaranteed.

Suggested application:  nanomechanical studies where a library of inexpensive, very stiff probes could be helpful. These probes can also be used for general purpose imaging.

Partial wafer containing more than 300 probes:  Price: $1500.

Contact mode Silicon nitride probes

Special price on a partial wafer containing more than 200 probes:  Price: $800.
If you’re comfortable separating the individual probes, you’ll save a lot of money.

Used Tapping Si probes

These model TESP probes have blunt tips but are perfect for mounting nanotubes.  Carbon nanotubes can be trimmed electrically due to the low resistivity of the monolithic substrate and tip.
These probes can also be used for training new AFM users.  Why drop a $40 probe when you can drop one of these?
Special sale price for quantities over 100 probes:  $5/probe.  This is a savings of more than 50% compared with our regular price for practice grade Si probes. While quantities last.

Probes for AFMs originaly made by Park Scientific or ThermoMicroscopes.

Park Ultralevers 2 um

  • Wafer no. 002-031, Model no. STUL-20AU
  • Strip of sixteen, $200 as-is, $300 singulated (expected yield about 14 probes)

Veeco ULCT-AUMT-AB-10 – pre mounted probes.

  • Part:  00-103-1000
    Material 0.001 Ohm-cm Boron (p) doped Si
    Cantilever T 1.2-2.2 um
    A- f0: 26-50 kHz  k: .16-.41 N/M
    B- f0:  30-60 kHz  k:  .25-.63 N/m
    C- fo: 100-10 kHz  k:  .84-3.1 N/m
    D- f0:  110-210 kHz  k: 1.1-4.1 N/M
    Coating:  Front side:  NONE  Back Side:  Top-30nm Au/BOT-3nm Ti
    Wafer: 051-020
  • Call for price.